r07ds0995ej0100 rev.1.00 page 1 of 6 jan 09, 2013 preliminary datasheet h5n3007fl-m0 300v - 15a - mos fet high speed power switching features ? low on-resistance r ds(on) = 0.12 ? typ. (at i d = 7.5 a, v gs = 10 v, ta = 25 ? c) ? low leakage current ? high speed switching ? built-in fast recovery diode outline renesas package code: prss0003af-a (package name: to-220fl) 1 2 3 d s g 1. gate 2. drain 3. source absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 300 v gate to source voltage v gss ? 30 v drain current i d 15 a drain peak current i d (pulse) note1 60 a body-drain diode reverse drain current i dr 15 a body-drain diode reverse drain peak current i dr (pulse) note1 60 a avalanche current i ap note3 15 a avalanche energy e ar note3 13.5 mj channel to case thermal impedance ? ch-c 3.57 ?c/w channel dissipation pch note2 35 w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. value at tc = 25 ?c 3. stch = 25 ? c, tch ? 150 ?c r07ds0995ej0100 rev.1.00 jan 09, 2013
h5n3007fl-m0 preliminary r07ds0995ej0100 rev.1.00 page 2 of 6 jan 09, 2013 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 300 ? ? v i d = 10 ma, v gs = 0 zero gate voltage drain current i dss ? ? 10 ? av ds = 300 v, v gs = 0 gate to source leak current i gss ? ? ? 0.1 ? av gs = ? 30 v, v ds = 0 gate to source cutoff voltage v gs(off) 1.5 ? 4.0 v v ds = 10 v, i d = 1 ma forward transfer admittance |yfs| 9 15 ? s i d = 7.5 a, v ds = 10 v note4 static drain to source on state resistance r ds(on) ? 0.12 0.16 ? i d = 7.5 a, v gs = 10 v note4 input capacitance ciss ? 2180 ? pf output capacitance coss ? 275 ? pf reverse transfer capacitance crss ? 77 ? pf v ds = 25 v v gs = 0 f = 1 mhz turn-on delay time t d(on) ? 35 ? ns rise time t r ? 50 ? ns turn-off delay time t d(off) ? 160 ? ns fall time t f ? 40 ? ns i d = 7.5 a v gs = 10 v r l = 20 ? rg = 10 ? total gate charge qg ? 80 ? nc gate to source charge qgs ? 10 ? nc gate to drain charge qgd ? 40 ? nc v dd = 240 v v gs = 10 v i d = 15 a body-drain diode forward voltage v df ? 0.85 1.30 v i f = 15 a, v gs = 0 note4 body-drain diode reverse recovery time t rr ? 110 ? ns i f = 15 a, v gs = 0 di f /dt = 100 a/ ? s notes: 4. pulse test
h5n3007fl-m0 preliminary r07ds0995ej0100 rev.1.00 page 3 of 6 jan 09, 2013 main characteristics 60 50 40 30 20 10 0 0 48 12 1 6 20 drain to source voltage v ds (v) drain current i d (a) typical output characteris tics 10 1100 0.1 1 0.01 drain current i d (a) drain to source on state resistance r ds(on) () static drain to source on state resistance vs. drain current (typical) v gs = 10 v ta = 25c pulse test 60 50 40 30 20 10 0 v g s = 4 v 4.5 v 5.5 v 5 v 6 v ta = 25c pulse test 15 v, 10 v 8 v gate to source voltage v gs (v) drain current i d (a) typical transfer characteris tics drain to source voltage v ds (v) drain current i d (a) maximum safe operation area case temperature tc (c) static drain to source on state resistance r ds(on) () static drain to source on state resistance vs. temperature (typical) 0 -25 0 5 02 575 100 12 5 150 1000 0.01 0.1 1 10 100 0. 1 1 10 100 1000 tc = 25c 1 shot operation in t his area is limited by r ds(on) 11 01 0 0 1000 100 10 reverse drain c urrent i dr (a) reverse recovery time t rr (ns) body-drain diode reverse recovery time (typical) di / dt = 100 a / s v gs = 0, ta = 25c 10 s pw = 100 s 15 a 2 468 10 i d = 25 a 0.5 0.4 0.3 0.1 0.2 0 v ds = 10 v pulse test tc = ?25c 25c 75c 7.5 a v gs = 10 v pulse test
h5n3007fl-m0 preliminary r07ds0995ej0100 rev.1.00 page 4 of 6 jan 09, 2013 0 5 0 100 150 10000 100 1000 400 0 16 300 12 200 8 100 0 4 20 40 60 8 0100 0 10 ciss coss crss capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics (typical) case temperature tc (c) gate to source cutoff voltage vs. case temperature (typical) gate to source cutoff voltage v gs(off) (v) 0 2 1 3 4 5 -25 02 55 0 75 100 12 5 150 v ds v gs v dd = 240 v 100 v 50 v v ds = 10 v i d = 10 ma 1 ma 0.1 ma v gs = 0 f = 1 mhz ta = 25c i d = 15 a ta = 25 c v dd = 240 v 100 v 50 v 60 50 40 30 20 10 0 00 .4 0.8 1.21 .6 2.0 source to drain voltage v sd (v) reverse drain current vs. source to drain voltage (typical) reverse drain current i dr (a) v gs = 0 ta = 25c pulse test
h5n3007fl-m0 preliminary r07ds0995ej0100 rev.1.00 page 5 of 6 jan 09, 2013 vin monitor d.u.t. vin 10 v r l v dd = 150 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 10 90% 10% t f switching time test circuit waveform 10 1 0.1 0.01 100 1 m10 m 100 m 1 10 100 pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width p dm pw t d = pw t ch ? c(t) = s (t) ? ch ? c ch ? c = 3.57c/w, tc = 25c tc = 25c d = 1 0.5 0.2 0.1 0.0 5 0.02 0 .01 1 shot pulse
h5n3007fl-m0 preliminary r07ds0995ej0100 rev.1.00 page 6 of 6 jan 09, 2013 package dimensions unit: mm previous code prss0003af-a to-220fl mass[typ.] 1.5g ? renesas code jeita package code package name to-220fl 3.6 0.3 15. 0 0.3 12.5 0.5 10.0 0.3 6.5 0.3 3.2 0.2 0.75 0.15 1.15 0.2 2.54 0.25 2.54 0.25 2 .6 0 . 2 4.5 0.2 0.40 0.15 2.8 0.2 1.15 0.2 3.0 0.3 ordering information orderable part number quan tity shipping container h5n3007fl-m0-e#t2 50 pcs tube
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